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SEMiX604GB126HDs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICRM VGES Tj = 150C ICRM = 2xICnom VCC = 600V VGE 20V Tj = 125C VCES 1200V Tc = 25C Tc = 80C 1200 590 413 800 -20 ... 20 10 -40 ... 150 Tc = 25C Tc = 80C 533 367 800 2500 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 60s 4000 V A A A V s C A A A A C A C V
Conditions
Values
Unit
SEMiX(R)4s
Trench IGBT Modules
tpsc Tj
Inverse diode IF Tj = 150C IFRM = 2xIFnom tp = 10ms, half sine wave, Tj = 25C
SEMiX604GB126HDs Preliminary Data Features
* Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532
IFRM IFSM Tj Module It(RMS) Tstg Visol
Typical Applications
* AC inverter drives * UPS * Electronic Welding
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT ICnom = 400A VGE = 15V chiplevel Tj = 25C Tj = 125C Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 5 Tj = 25C Tj = 125C f = 1MHz f = 1MHz f = 1MHz 28.8 1.51 1.31 3200 1.88 330 70 36 630 130 60 0.065 1.7 2.00 1 0.9 1.8 2.8 5.8 0.12 2.1 2.45 1.2 1.1 2.3 3.4 6.5 0.36 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W
Conditions
min.
typ.
max.
Unit
Remarks
* Case temperatur limited to TC=125C max. * Not for new design
VGE=VCE, IC = 16mA VGE = 0V VCE = 1200V VCE = 25V VGE = 0V VGE = - 8 V...+ 15 V Tj = 25C VCC = 600V ICnom = 400A Tj = 125C RG on = 2.2 RG off = 2.2
GB (c) by SEMIKRON 03.04.2008 1
SEMiX604GB126HDs
Characteristics Symbol Conditions
Tj = 25C Tj = 125C Tj = 25C Tj = 125C rF Tj = 25C Tj = 125C IFnom = 400A Tj = 125C di/dtoff = 6200A/s T = 125C j VGE = -15V Tj = 125C VCC = 600V per diode 0.9 0.7 1.3 1.8
min.
typ.
1.6 1.6 1 0.8 1.5 2.0 475 100 46
max.
1.8 1.8 1.1 0.9 1.8 2.3
Unit
V V V V m m A C mJ
Inverse diode VF = VEC IFnom = 400A VGE = 0V chiplevel VF0
SEMiX(R)4s
Trench IGBT Modules
IRRM Qrr Err Rth(j-c)D Module
0.11 22
K/W nH m m K/W
SEMiX604GB126HDs Preliminary Data Features
* Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532
LCE RCC'+EE' Rth(c-s) Ms Mt w Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25C TC = 125C
0.7 1 0.03 5 5 400 0,493 5% 3550 2%
Nm Nm g
k K
Typical Applications
* AC inverter drives * UPS * Electronic Welding
Remarks
* Case temperatur limited to TC=125C max. * Not for new design
GB 2 03.04.2008 (c) by SEMIKRON
SEMiX604GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
(c) by SEMIKRON
03.04.2008
3
SEMiX604GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
03.04.2008
(c) by SEMIKRON
SEMiX604GB126HDs
SEMiX 4s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or implied is made regarding delivery, performance or suitability.
(c) by SEMIKRON
03.04.2008
5

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